System and method for treating substrate

ABSTRACT

A method and system for treating a substrate are provided. The system includes a coating unit, a pre/post-exposure treatment unit, and a developing unit. Each of the units includes a load port and an index module. The pre/post-exposure treatment unit includes first and second modules that are arranged in different layers. The first module performs a process for coating a protective layer on the wafer before an exposure process. The second module performs a process for cleaning the wafer and a post-exposure bake process after the exposure process.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims priority under 35 U.S.C.§120 and 121 to U.S. application Ser. No. 12/656,425 filed Jan. 29,2010, which claims priority under 35 U.S.C. §119 to Korean PatentApplication Nos. 10-2009-0007626, filed on Jan. 30, 2009 and10-2009-0027373, filed on Mar. 31, 2009, the entire contents of whichare hereby incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention disclosed herein relates to a system and methodfor treating substrates, and more particularly, to a system and methodfor performing a photolithography process for wafers.

A variety of processes such as a cleaning process, a depositing process,a photolithography process, an etching process, an ion implantingprocess, etc are performed to manufacture semiconductor devices. Thephotography process for farming a pattern plays an important role inhigh integration of the semiconductor devices.

Generally, a system for performing the photolithography process includesa coating unit for coating resist on a wafer, a developing unit forperforming a developing process for the wafer that has gone through anexposure process, and a treating module having an interface forinline-connection with an exposure apparatus. In recent years, with thehigh-integration of the semiconductor devices, the time for performingthe exposure process has been increased. This leads to wafer congestionin the exposure apparatus. Therefore, the treating efficiencies in thecoating and developing units that are provided in a substrate treatingmodule are significantly deteriorated.

SUMMARY OF THE INVENTION

The present invention provides system and method for treatingsubstrates, which can improve efficiency of a photolithography process.

The present invention also provides system and method for treatingsubstrates, which can increase production efficiency of units forperforming coating and developing processes that are respectivelypreformed before and after an exposure process.

The present invention also provides a substrate treatment system havinga layout that can efficiently arrange chambers performing processes.

Objects of the present invention are not limited to those mentionedabove, and other objects of the present invention will be apparentlyunderstood by those skilled in the art through the followingdescription.

Embodiments of the present invention provide systems for treating asubstrate, including: a coating unit performing a coating process forthe substrate; a pre/post-exposure treatment unit connected to anexposure unit performing an exposure process and performing apre/post-exposure treatment process for the substrate that is processedin the coating unit; and a developing unit performing a developingprocess for the substrate that is processed in the pre/post-exposuretreatment unit. Each of the coating unit, pre/post-exposure treatmentunit, and the developing unit includes a load port on which a containerreceiving the substrates is disposed, an index module taking out orcarrying the substrate from or to the container, and a process moduleperforming a predetermined process on the substrate. The load port,index module, and process module are sequentially arranged. Thepre/post-exposure treatment unit further includes an interface moduleconnected to the exposure unit and the interface module is disposed atone side of the process module and the index module is disposed at theother side of the process module.

In some embodiments, the process module of the pre/post-exposuretreatment unit may include first and second modules that are disposed atdifferent layers. The first module may include a protective layercoating chamber coating a protective layer on the substrate; a bakechamber performing a heat treatment for the substrate; and a first robottransferring the substrate between the protective layer coating chamberand the bake chamber. The second module may further include a cleaningchamber cleaning the substrate. In addition, the second module mayinclude a post-exposure bake chamber performing a post-exposure bakechamber for the substrate that is exposed; and a second robottransferring the substrate between the cleaning chamber and thepost-exposure bake chamber.

In other embodiments, the pre/post-exposure treatment unit may furtherinclude a buffer module disposed between the index module and theprocess module, wherein the buffer module comprises: a first bufferdisposed at a height corresponding to the first module and temporarilystoring the substrate; and a second buffer disposed at a heightcorresponding to the second module and temporarily storing thesubstrate. The first and second buffers may be stacked one another, andeach of the first and second buffers may include a plurality ofsupports. In addition, the buffer module of the pre/post-exposuretreatment unit may further include a buffer robot transferring thesubstrate between the first and second buffers. The first and secondbuffers may be arranged side by side in a vertical direction. The buffermodule may be disposed at a height corresponding to the first module andfurther include a cooling chamber cooling the substrate.

In still other embodiments, the interface module may include a firstbuffer disposed at a height corresponding to the first module andtemporarily storing the substrate; a second buffer disposed at a heightcorresponding to the second module and temporarily storing thesubstrate; and an interface robot transferring the substrate between theexposure unit and the second buffer and between the second buffer andthe exposure unit.

In even other embodiments, the coating unit may further include an edgeexposure module, wherein the edge exposure module may be disposed at oneside of the process module and the index module may be disposed at theother side of the process module.

In other embodiments of the present invention, pre/post-exposuretreatment units for performing processes required before and after anexposure process for a substrate on which photoresist is coated includesa load port on which a container receiving the substrates is disposed;an index module taking out the substrate from the container or carryingthe substrate to the container; a process module performing a processfor the substrate; and an interface module connected to an exposureunit. The load port, index module, process module, and interface moduleare sequentially arranged in a first direction and the process moduleincludes a protective layer coating chamber coating a protective layeron the substrate. The process module may further include a cleaningchamber cleaning the substrate. The process module may further include abake chamber heat-treating the substrate. The process module may furtherinclude a post-exposure bake chamber performing a post-exposure bakeprocess for the substrate that is exposed.

In some embodiments, the process module may include first and secondmodules disposed at different layers, wherein the protective coatingchamber may be disposed in the first module and the cleaning chamber maybe disposed in the second module. The process module may further includea bake chamber disposed in the first module and heat-treating thesubstrate; a first robot disposed in the first module and transferringthe substrate between the protective layer coating chamber and the bakechamber; a post-exposure bake chamber disposed in the second module andperforming a post-exposure bake process for the substrate that isexposed; and a second robot disposed in the second module andtransferring the substrate between the cleaning chamber and thepost-exposure bake chamber.

In other embodiments, the pre/post-exposure treatment unit may furtherinclude a buffer module disposed between the index module and theprocess module, wherein the buffer module may include a first bufferdisposed at a height corresponding to the first module and temporarilystoring the substrate; and a second buffer disposed at a heightcorresponding to the second module and temporarily storing thesubstrate. The first and second buffers may be stacked one another andeach of the first and second buffers may include a plurality of supportson which the substrates are respectively disposed. The buffer module mayfurther include a buffer robot transferring the substrate between thefirst and second buffers. The first and second buffers may be arrangedside by side in a vertical direction. The buffer module may be disposedat a height corresponding to the first module and further include acooling chamber cooling the substrate.

In still other embodiment, the interface module may include a firstbuffer disposed at a height corresponding to the first module andtemporarily storing the substrate; a second buffer disposed at a heightcorresponding to the second module and temporarily storing thesubstrate; and an interface robot transferring the substrate between thefirst buffer and the exposure unit and between the second buffer and theexposure unit. The first and second buffers may be stacked one anotherand each of the first and second buffers may include a plurality ofsupports on which the substrates are respectively disposed.

In still other embodiments of the present invention, pre/post-exposuretreatment units for performing processes required before and after anexposure process for a substrate on which photoresist is coated includesa load port on which a container receiving the substrates is disposed;an index module taking out the substrate from the container or carryingthe substrate to the container; a process module performing a processfor the substrate; a buffer module disposed between the index module andthe process module; and an interface module connected to an exposureunit. The load port, index module, buffer module, process module, andinterface module are sequentially arranged in a first direction and theprocess module includes first and second modules disposed at differentlayers. The first module includes a protective layer coating chambercoating a protective layer on the substrate; a bake chamberheat-treating the substrate; and a return chamber provided with a firstrobot transferring the substrate between the protective layer coatingchamber, bake chamber, buffer module, and interface module. The secondmodule includes a cleaning chamber cleaning the substrate; apost-exposure bake chamber performing a post-exposure bake process forthe substrate; and a return chamber provided with a second robottransferring the wafer between the cleaning chamber, post-exposure bakechamber, buffer module, and interface module.

In some embodiments, the protective layer coating chamber, returnchamber provided with the first robot, and bake chamber may besequentially arranged in a second direction, and the cleaning chamber,return chamber provided with the second robot, and post-exposure bakechamber may be sequentially arranged in the second direction.

In other embodiments, the first module may be disposed above the secondmodule. The buffer module may include a first buffer disposed at aheight corresponding to the first module and temporarily storing thesubstrate and a cooling chamber disposed at a height corresponding tothe second module and cooling the substrate. The first buffer and thecooling chamber may be arranged side by side in a vertical direction.The first buffer may be arranged inline with the return chamber of thefirst module in the first direction when viewed from above.

In still other embodiments, the buffer module may further include asecond buffer disposed at a height corresponding to the second moduleand temporarily storing the substrate and a buffer robot transferringthe substrate between the first and second buffers. The first buffer andthe buffer robot may be arranged in a second direction that isperpendicular to the first direction when viewed from above.

In still other embodiments of the present invention, methods fortreating a substrate includes coating photoresist on the substrate;coating a protective layer on the substrate on which the photoresist iscoated; performing a liquid immersion lithography process for thesubstrate on which the protective layer is coated; cleaning thesubstrate that is processed in the liquid immersion process; andperforming a developing process for the substrate. The coating of theprotective layer and the cleaning of the substrate are performed in apre/post-exposure treatment unit connected inline with an exposure unitperforming the liquid immersion lithography process. The coating of thephotoresist is performed in a coating unit that is separated from thepre/post-exposure treatment unit. The performing of the developingprocess is realized in a coating unit separated from thepre/post-exposure treatment unit.

In some embodiments, the methods may further include performing apost-exposure bake process for the substrate after cleaning thesubstrate and before performing the developing process for thesubstrate. The cleaning of the substrate may be performed by supplyingcleaning liquid to the substrate and the cleaning liquid remaining onthe substrate may be removed by heating the substrate without drying thesubstrate by supplying fluid.

The cleaning of the substrate may be performed by supplying cleaningliquid to the substrate, and the cleaning liquid remaining on thesubstrate may be removed in the post-exposure bake process that isperformed immediately after the cleaning of the substrate.

The protect layer may be removed at an outside of the pre/post-exposuretreatment unit. A part of the protective layer may be removed in thedeveloping process and the rest may be removed in an ashing process.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present invention, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the present invention and, together with thedescription, serve to explain principles of the present invention. Inthe drawings:

FIG. 1 is a schematic view of a substrate treatment system according toan exemplary embodiment of the present invention,

FIGS. 2 to 4 are schematic views of a coating unit according to anexemplary embodiment of the present invention,

FIGS. 5 a to 5 b are flowcharts illustrating sequential processesperformed in the coating unit of FIG. 2,

FIGS. 6 to 8 are schematic views of a post-exposure bake unit accordingto an exemplary embodiment of the present invention,

FIG. 9 is a flowchart illustrating sequential processes performed in thecoating unit of FIG. 6,

FIGS. 10 to 12 are schematic views of a developing unit according to anexemplary embodiment of the present invention,

FIGS. 13 a to 13 b are flowcharts illustrating sequential processesperformed in the developing unit of FIG. 10, and

FIGS. 14 a to 14 g are views illustrating sequential processes forforming a pattern on a wafer.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described belowin more detail with reference to the accompanying drawings. The presentinvention may, however, be embodied in different forms and should not beconstructed as limited to the embodiments set forth herein. Rather,these embodiments are provided so that this disclosure will be thoroughand complete, and will fully convey the scope of the present inventionto those skilled in the art. In the drawings, the dimensions of layersand regions are exaggerated for clarity of illustration.

Systems of exemplary embodiments are used to perform a photolithographyprocess for substrates such as flat display panels or semiconductorwafers. Especially, the systems of the exemplary embodiments are used toperform process for treating the substrates, such as a coating process,a developing process, and other processes that are required before andafter a liquid immersion lithography process. In the followingdescription, a case where a wafer is used as the substrate will bedescribed as one example.

FIG. 1 is a schematic view of a substrate treatment system according toan exemplary embodiment of the present invention. Referring to FIG. 1, asubstrate treatment system 1 includes a coating unit 300, apre/post-exposure treatment unit 4000, and a developing unit 5000. Thecoating unit 3000, the pre/post-exposure treatment unit 4000 areseparated from each other. A wafer W is transferred between the coatingunit 3000, the pre/post-exposure treatment unit 4000 by an automatictransfer unit 1000 or a worker. The wafer W is transferred in a statewhere it is received in a container (2000 in FIG. 2). At this point, thecontainer 2000 is structured to be sealed. For instant, a front openunified pod (FOUP) having a front door may be used as the container2000. In the following description, a case where length directions ofthe coating unit 3000, pre/post-exposure treatment unit 4000, anddeveloping unit 5000 are arranged side by side with each other will bedescribed. However, the length directions of the coating unit 3000,pre/post-exposure treatment unit 4000, and developing unit 5000 may notbe arranged side by side with each other

The coating unit 3000 performs a first process for the wafer W. Thefirst process includes a coating process for coating photoresist on thewafer and heat treatment processes for heating and cooling the wafer Wbefore and after the coating process.

The developing unit 5000 performs a second process for the wafer W. Thesecond process includes a developing process for forming a desiredpattern by removing the photoresist using a developer and heat treatmentprocesses for heating and cooling the wafer W before and after thedeveloping process.

The pre/post-exposure treatment unit 4000 is connected inline to anexposure unit 9000. The pre/post-exposure treatment unit 4000 performs athird process. The third process includes a process performed betweenthe first process and the exposure process and a process performedbetween the exposure process and the second process. For example, whenthe exposure unit performs a liquid immersion lithography process, thethird process may include a process for coating a protective layer thatprotects the photoresist coated on the wafer W during the liquidimmersion lithography process. In addition, the third process mayinclude a process for cleaning the wafer after the exposure process. Inaddition, when chemically amplified resist is used in the coatingprocess and deep ultraviolet (DUV) is used in the exposure process, thethird process may include a post-bake process that is performed afterthe exposure process.

The following will describe the respective units.

(Coating Unit)

FIGS. 2 to 4 are schematic views illustrating the coating unit 3000.That is, FIG. 2 is a view of the coating unit 3000 when viewed fromabove, FIG. 3 is a view of the coating unit 3000 of FIG. 2 when viewedin a direction “A,” and FIG. 4 is a view of the coating unit 3000 ofFIG. 2 when viewed in a direction “B.”

Referring to FIGS. 2 to 4, the coating unit 3000 includes a rod port3100, an index module 3200, a buffer module 3300, a process module 3400,and an edge exposure module 3500. The load port 3100, index module 3200,buffer module 3300, process module 3400, and edge exposure module 3500are sequentially arranged in a line extending in a direction.Hereinafter, the direction in which the road port 3100, index module3200, buffer module 3300, process module 3400, and edge exposure module3500 are arranged will be referred to as “first direction 12,” thedirection that is perpendicular to the first direction when viewed fromabove will be referred to as “second direction 14,” and the directionthat is vertical to the first and second directions 12 and 14 will bereferred to as “third direction 16.”

The load port 3100 includes a plurality of load tables 3120 on which thecontainers 2000 receiving the wafers W are disposed. The load tables3120 are arranged in a line extending in the second direction 14. InFIG. 2, four load tables 3120 are provided.

The index module 3200 transfers the wafer W between the container 2000on the load table 3120 of the load port 3100 and the buffer module 3300.The index module 3200 includes a frame 3210, an index robot 3220, and aguide rail 3230. The frame 3210 is generally formed in an emptyrectangular parallelepiped shape. The frame 3210 is disposed between theload port 3100 and the buffer module 3300. The frame 3210 of the indexmodule 3200 may have the lower height than a frame 3310 of the buffermodule 3300, which will be described later. The index robot 3220 and theguide rail 3230 are disposed in the frame 3210. The index robot 3220 hasa 4-shaft driving structure such that a hand 3221 directly handling thewafer W can rotate and move in the first, second, and third directions12, 14, and 16. The index robot 3220 includes an arm 3222, a support3223, and a base 3224 in addition to the hand 3221. The hand 3221 isfixedly installed on the arm 3222. The arm 3222 is provided to beexpandable, contractible, and rotatable. The support 3223 is disposedsuch that a length direction thereof extends in the third direction 16.The arm 3222 is coupled to the support 3223 to be movable along thesupport 3223. The support 3223 is fixedly coupled to the base 3224. Theguide rail 3230 is provided such that a length direction thereof extendsin the second direction 14. The base 3224 is coupled to the guide rail3230 to be linearly movable along the guide rail 3230. Although notshown in the drawings, the frame 3210 is provided with a door opener foropening and closing the door of the container 2000.

Referring to FIG. 3, the buffer module 3300 includes a frame 3310, afirst buffer 3320, a second buffer 3330, a first cooling chamber 3340, asecond cooling chamber 3350, and a buffer robot 3360. The frame 3310 isformed in an empty rectangular parallelepiped shape. The frame 3310 isdisposed between the index module 3200 and the process module 3400. Thefirst buffer 3320, second buffer 3330, first cooling chamber 3340,second cooling chamber 3350, and buffer robot 3360 are disposed in theframe 3310. The second cooling chamber 3350, second buffer 3330, firstcooling chamber 3340, and first buffer 3320 are sequentially arrangedupward in the third direction 16. The first cooling chamber 3340 and thefirst buffer 3320 are located at the same height as a first module 3401of the process module 3400, which will be described later. The secondcooling chamber 3350 and the second buffer 3330 are located at the sameheight as a second module 3402 of the process module 3400, which will bedescribed later. The buffer robot 3360 is located to be spaced apartfrom the second buffer 3330, second cooling chamber 3350, first buffer3320, and first cooling chamber 3340 in the second direction 14 by apredetermined distance.

Each of the first and second buffers 3320 and 3330 temporarily stores aplurality of the wafers W. The second buffer 3330 includes a housing3331 and a plurality of supports 3332. The supports 3332 are disposed inthe housing 3331 and spaced apart from each other in the third direction16. One wafer W is disposed on each of the supports 3332. The housing3331 is provided with openings (not shown) corresponding to the indexrobot 3220, buffer robot 3360, and second robot 3482 such that the indexrobot 3220, buffer robot 3360, and a second robot 3482 of the secondmodule 3402, which will be described later, can carry or take the waferto or from the support 3332. The first buffer 3320 has a similarstructure to the second buffer 3330. However, the housing 3321 of thefirst buffer 3320 is provided with openings corresponding to the bufferrobot 3360 and a first robot 3432 on the first module 3401, which willbe described later. The number of the supports 3322 of the first buffer3320 may be same as or different from the number of the supports 3332 ofthe second buffer 3330. For instant, the number of the supports 3332 ofthe second buffer 3330 may be greater than the number of the supports3322 of the first buffer 3320.

The buffer robot 3360 transfers the wafer W between the first and secondbuffers 3320 and 3330. The buffer robot 3360 includes a hand 3361, anarm 3362, and a support 3363. The hand 3361 is fixedly installed on thearm 3362. The arm 3362 is configured to be capable of expanding andcontracting so that the hand 3361 can move in the second direction 14.The arm 3362 is coupled to the support 3363 to be linearly movable alongthe support 3363 in the third direction 16. The support 3363 has alength extending from a location corresponding to the second buffer 3330to a location corresponding to the first buffer 3320. The support 3363may further extend over the location corresponding to the second buffer3330 or the location corresponding to the first buffer 3320. The bufferrobot 3360 may be configured to have a 2-shaft driving structure suchthat the hand 3361 moves only in the second and third directions 14 and16.

The first and second cooling chambers 3340 and 3350 cool the wafer W.The second cooling chamber 3350 has a housing 3351 and a cooling plate3352. The cooling plate 3352 has a top surface on which the wafer W isdisposed and a cooling element 3353 cooling the wafer W. The coolingelement 3353 may be formed of a variety of elements such as coolingwater, a thermoelectric module, and the like. In addition, the secondcooling chamber 3350 may be provided with a lift pin assembly (notshown) locating the wafer W on the cooling plate 3352. The housing 3351is provided with openings (not shown) corresponding to the index robot3220 and the second robot 3482 so that the index robot 3220 and a secondrobot 3482 of the second module 3402, which will be described later, cancarry or take the wafer W onto or from the cooling plate 3352. Inaddition, the second cooling chamber 3350 may be provided with doors(not shown) for opening and closing the openings. The first coolingchamber 3340 has the same structure as the second cooling chamber 3350.

The process module 3400 performs a process required before the wafer Wis transferred to the pre/post-exposure treatment unit 4000. The processmodule 3400 is generally formed in a rectangular parallelepiped shape.The process module 3400 includes a first module 3401 and a second module3402. The first and second modules 3401 and 3402 are arranged atdifferent layers. The first and second modules 3401 and 3402 may beprovided to perform a same process. For example, the first module 3401is located above the second module 3402.

The first module 3401 includes a resist coating chamber 3410, a bakechamber 3420, and a return chamber 3430. The resist coating chamber3410, bake chamber 3420, and return chamber 3430 are sequentiallyarranged in the second direction 14. Therefore, the resist coatingchamber 3410 and the bake chamber 3420 are spaced apart from each otherin the second direction 14 with the return chamber 3430 interposedtherebetween. A plurality of the resist coating chambers 3410 areprovided in the first and third directions 12 and 16. In the drawings,six resist coating chambers 3410 are exemplarily provided. A pluralityof the bake chambers 3420 are provided in each of the first and thirddirections 12 and 16. In the drawings, six bake chambers 3420 areexemplarily provided. However, six or more bake chambers 3420 may beprovided.

The return chambers 3430 are located side by side with the first buffer3320 of the buffer module 3300 in the first direction 12. The firstrobot 3432 and the guide rail 3433 are disposed in the return chamber3430. The return chamber 3430 is generally formed in a rectangularshape. The first robot 3432 transfers the wafer W between the bakechambers 3420, the resist coating chambers 3400, the first buffer 3320of the buffer module 3300, the first cooling chamber 3340, a firstbuffer 3520 of the edge exposure module 3500, which will be describedlater, and the first cooling chamber 3540. The guide rail 3433 has alength direction extending in the first direction 12. The guide rail3433 guides the linear movement of the first robot 3432 in the firstdirection 12. The robot 3432 has a hand 3434, an arm 3453, a support3436, and a base 3437. The hand 3434 is fixedly installed on the arm3435. The arm 3435 is configured to be capable of expanding andcontracting so that the hand 3434 can move in the horizontal direction.The support 3436 is disposed such that a length direction thereofextends in the third direction 16. The arm 3435 is coupled to thesupport 3436 to be capable of linearly moving along the support 3436 inthe third direction 16. The support 3436 is fixedly coupled to the base3437 and the base 3437 is coupled to the guide rail 3433 to be capableof moving along the guide rail 3433.

All of the resist coating chambers 3410 have a same structure. However,types of the photoresist used in the respective resist coating chambers3410 may be different from each other. For example, chemically amplifiedresist may be used as the photoresist. The resist coating chambers 4310coat the photoresist on the wafers W. The resist coating chamber 3410includes a housing 3411, a support plate 3412, and a nozzle 3413. Thehousing 3411 is formed in a cup shape having an opened top. Thesupporting plate 3412 is located in the housing 3411 to support thewafer W. The supporting plate 3412 is configured to be capable ofrotating. The nozzle 3413 supplies the photoresist onto the wafer W onthe supporting plate 3412. The nozzle 3413 is formed in a circular tubeshape to supply the photoresist to a center of the wafer W. The nozzle3413 may have a length corresponding to a diameter of the wafer W andhave a slit-type outlet. In addition, the resist coating chamber 3410may further include a nozzle 3414 for supplying cleaning liquid such asdeionized water for cleaning a surface of the wafer W on which thephotoresist is coated.

The bake chambers 3420 heat-treat the wafers W. For example, the bakechambers 3420 perform a pre-bake process for removing organic matters ormoisture from the surfaces of the wafers W by heating the wafers W at apredetermined temperature before coating the photoresist on the wafersW, a soft bake process performed after coating the photoresist on thewafers W. The bake chambers 3420 further perform cooling processes afterthe respective heating processes. The bake chamber 3420 includes acooling plate 3421 or a heating plate 3422. The cooling plate 3421 isprovided with a cooling element 3423 such as cooling water orthermoelectric module. The heating plate 3422 is provided with a heatingelement 3424 such as a heating wire or a thermoelectric module. Theheating plate 3422 and the cooling plate 3421 may be provided in therespective bake chambers 3420. Alternatively, some of the bake chambers3420 may be provided with only the heating plate 3422 and the rest maybe provided with only the cooling plate 3421.

The second module 3402 includes a resist coating chamber 3460, a bakechamber 3470, and a return chamber 3480. The resist coating chamber3460, bake chamber 3470, and return chamber 3480 have same structuresand arrangements as the resist coating chamber 3410, bake chamber 3420,and return chamber 3430 of the first module 3401. In addition, thereturn chamber 3480 has a second robot 3482 having the same structure asthe first robot 3432 of the first module 3401. The second robot 3482 isconfigured to transfer the wafer W between the resist coating chamber3460, bake chamber 3470, second buffer and second cooling chambers 3330and 3350 of the buffer module 3300, and second buffer 3530 and secondcooling chamber 3550 of the edge exposure module 3500, which will bedescribed later.

In the above-described process module 3400, the first and second modules3401 and 3402 are separated from each other. In addition, when viewedfrom above, the first module 3401 has the same structure and arrangementas the second module 3402.

The edge exposure module 3500 performs a process for exposing aperiphery region of the wafer W. The edge exposure module 3500 includesa frame 3510, a first buffer 3520, a second buffer 3530, a first coolingchamber 3540, a second cooling chamber 3550, an edge exposure robot3560, a first edge exposure chamber 3570, and a second edge exposurechamber 3580 (disposed under the first edge exposure chamber 3570 inFIG. 2). The frame 3510 is formed in a rectangular shape. The edgeexposure chamber 3540, first buffer 3520, first edge exposure chamber3570, first cooling chamber 3540, second buffer 3530, second edgeexposure chamber 3580, and second cooling chamber 3550 are locatedwithin the frame 3510. The first buffer 3520, second edge exposurechamber 3570, and first cooling chamber 3540 are arranged at a heightcorresponding to the first module 3410. The second buffer 3530, secondedge exposure chamber 3580, second cooling chamber 3550 are arranged ata height corresponding to the second module 3402. The first buffer 3520,first cooling chamber 3540, second buffer 3530, are second coolingchamber 3550 are sequentially arranged from above along a line extendingin the third direction 16. When viewed from above, the first buffer 3520and the return chamber 3430 of the first module 3401 are arranged alonga line extending in the first direction 12. The first edge exposurechamber 3570 is spaced apart from the first buffer 3520 and the firstcooling chamber 3540 by a predetermined distance in the second direction14. The second edge exposure chamber 3580 is spaced apart from thesecond buffer 3530 and the second cooling chamber 3550 by apredetermined distance in the second direction 14. The second edgeexposure chamber 3580 and the first edge exposure chamber 3570 arearranged along a line extending in the third direction 16.

The edge exposure robot 3560 transfers the wafer W between the firstbuffer 3520, first edge exposure chamber 3570, first cooling chamber3540, second buffer 3530, second edge exposure chamber 3580, and secondcooling chamber 3550. The edge exposure robot 3560 is located betweenthe first edge exposure chamber 3570 and the first buffer 3520. The edgeexposure robot 3560 may have the similar structure to the buffer robot3360.

The first buffer 3520, first cooling chamber 3540, and first edgeexposure chamber 3570 perform following processes for the wafers W thatare processed in the first module 3401. The first buffer 3520 and secondbuffer 3560 have the same structure as the first buffer 3320 of thebuffer module 3300. The first cooling chamber 3540 cools the wafers Wthat are processed in the first module 3401. The first cooling chamber3540 has the similar structure to the first cooling chamber 3340 of thebuffer module 3300. The first edge exposure chamber 3570 performs anexposure process for the edges of the wafers W that are cooled in thefirst cooling chamber 3540. The first buffer 3520 temporarily stores thewafers W before the wafers W that are processed in the first edgeexposure chamber 3570 are transferred to the first module 3401.

The second buffer 3530, second cooling chamber 3550, and second edgeexposure chamber 3580 perform following processes for the wafers W thatare processed in the second module 3402. The second cooling chamber 3550cools the wafers W that are processed in the second module 3402. Thesecond cooling chamber 3550 has the similar structure to the secondcooling chamber 3350 of the buffer module 3300. The second edge exposurechamber 3580 performs an exposure process for the edges of the wafers Wthat are processed in the second cooling chamber 3550. The second buffer3530 temporarily stores the wafers W before the wafers W that areprocessed in the second edge exposure chamber 3580 are transferred tothe second module 3402.

The following will describe the coating process by the coating unit 3000with reference to FIGS. 5 a and 5 b. FIGS. 5 a and 5 b are flowchartsillustrating the process for the wafer in the coating unit 3000according to an embodiment.

The container 2000 receiving the wafers W is disposed on the load table3120 of the load port 3100 (S112). The door of the container 2000 isopened by the door opener. The index robot 3220 takes out the wafer Wfrom the container 2000 and carries the same to the second buffer 3330(S112). The wafer W is transferred to one of the first and secondmodules 3401 and 3402.

When it is selected that the wafer W is processed in the first module3401, the buffer robot 3360 carries the wafer W stored in the secondbuffer 3330 to the first buffer 3320 (S120). The first robot 3432 takesout the wafer W from the first buffer 3320 and carries the same to thebake chamber 3420 (S112). The bake chamber 3420 performs sequentiallythe pre-bake process and the cooling process (S124). The first robot3432 takes out the wafer W from the bake chamber 3420 and carries thesame to the resist coating chamber 3410 (S126). The resist coatingchamber 3410 coats the photoresist onto the wafer W (S128). Next, thefirst robot 3423 carries the wafer W from the resist coating chamber3410 to the bake chamber 3420 (S130). The bake chamber 3420 performs thesoft bake process for the wafer W (S132).

The first robot 3432 takes out the wafer W from the bake chamber 3420and carries the same to the first cooling chamber 3540 of the edgeexposure module 3500 (S134). The first cooling chamber 3540 performs thecooling process for the wafer W (S136). The cooling process isselectively performed in the bake chamber 3420 and the wafer W may bedirectly transferred from the bake chamber 3420 to the first buffer3520. The wafer W that is processed in the first cooling chamber 3540 istransferred to the first edge exposure chamber 3570 by the edge exposurerobot 3560 (S138). The wafer W that is processed in the first coolingchamber 3540 may be carried to the first buffer 3520 by the edgeexposure robot 3560 and temporarily stored in the first buffer 3520,after which the wafer W may be carried to the first edge exposurechamber 3570 by the edge exposure robot 3560. The first edge exposurechamber 3570 performs the process for exposing the edge of the wafer W(S140). The wafer W that is processed in the first edge exposure chamber3570 is carried to the first buffer 3520 by the edge exposure robot 3560(S142).

The first robot 3432 carries the wafer W from the first buffer 3520 tothe bake chamber 3420 (S144). The bake chamber 3420 performs a processfor heating the wafer W (S146). The first robot 3432 carries the wafer Wfrom the bake chamber 3420 to the first cooling chamber 3340 of thebuffer module 3300 (S148). The first cooling chamber 3340 performs theprocess for cooling the wafer W (S150). The index robot 3220 carries thewafer W from the first cooling chamber 3340 to the container 2000(S152).

When it is selected that the wafer W is processed in the second module3402, the second robot 3482 takes out the wafer W from the second buffer3330 and carries the same to the bake chamber 3470 of the second module3402 (S160). The bake chamber 3470 sequentially performs the pre-bakeprocess and the cooling process (S162). The second robot 3482 takes outthe wafer W from the bake chamber 3470 and carries the same to theresist coating chamber 3460 (S164). The photoresist is coated on thewafer W in the resist coating chamber 3460 (S166). Next, the secondrobot 3482 carries the wafer W from the resist coating chamber 3460 tothe bake chamber 3470 (S168). The bake chamber 3470 performs the softbake process for the wafer W (S170).

The second robot 3482 takes out the wafer W from the bake chamber 3470and carries the same to the second cooling chamber 3550 of the edgeexposure module 3500 (S172). The second cooling chamber 3550 performsthe process for cooling the wafer W. Alternatively, the cooling processmay be performed in the bake chamber 3470 and the wafer W may bedirectly carried from the bake chamber 3470 to the second buffer 3530.The wafer W that is processed in the second cooling chamber 3580 iscarried to the second edge exposure chamber 3580 by the edge exposurerobot 3560 (S174). The wafer W processed in the second cooling chamber3550 may be carried to the second buffer 3530 by the edge exposure robot3560 and temporarily stored in the second buffer 3530, after which thewafer W may be carried to the second edge exposure chamber 3580 by theedge exposure robot 3560 (S176). The second edge exposure chamber 3580performs the process for exposing the edge of the wafer W (S178). Thewafer W processed in the second edge exposure chamber 3580 is carried tothe second buffer 3530 by the edge exposure robot 3560 (S180).

The second robot 3482 carries the wafer W from the second buffer 3530 tothe bake chamber 3470 (S182). The bake chamber 3470 performs the processfor heating the wafer W (S184). The second robot 3482 carries the waferW from the bake chamber 3470 to the second cooling chamber 3350 of thebuffer module 3300 (S186). The second cooling chamber 3350 performs theprocess for cooling the wafer W (S188). The index robot 3220 carries thewafer W from the second cooling chamber 3350 to the container 2000(S190).

The following will describe a variety of modified examples of theabove-described coating unit 3000.

The process module 3400 may include only one module instead of the firstand second modules 3401 and 3402 that are disposed at different layers.

In addition, a plurality of first cooling chambers 3340 and a pluralityof second cooling chambers 3350 may be stacked one another in the indexmodule 3200. In addition, a plurality of first cooling chambers 3540 anda plurality of edge exposure chambers 3570 may be provided in the edgeexposure module 3500. A plurality of second cooling chambers 3550 and aplurality of second edge exposure chambers 3580 may be also provided inthe edge exposure module 3500.

In addition, the first and second cooling chambers 3340 and 3350 may notbe provided in the buffer module 3300. In this case, the wafer W may bedirectly transferred from the first module 3401 to the first buffer 3320by the first robot 3432 and the index robot 3220 may carry the wafers Wstored in the first buffer 3320 to the container 2000. In addition, thewafer W may be directly transferred from the second module 3402 to thesecond buffer 3330 by the second robot 3482 and the index robot 3220 maycarry the wafers W stored in the second buffer 3330 to the container2000.

Further, the locations of the first buffer 3320 and the first coolingchamber 3340 may be exchanged in the buffer module 3300. The locationsof the second buffer 3330 and the second cooling chamber 3350 may bealso exchanged in the buffer module 3300.

In addition, the buffer module 3300 may have the same height as theprocess module 3400. In this case, the index robot 3220 may directlycarry the wafers W to the first buffer 3320.

Further, the first cooling chamber 3540 and the second cooling chamber3550 may not be provided in the edge exposure module 3500. In this case,the wafer W processed in the first module 3401 is directly carried tothe first buffer 3520 by the first robot 3432. In addition, the wafer Wprocessed in the second module 3402 is directed carried to the secondbuffer 3530 by the second robot 3482.

In addition, in the edge exposure module 3500, the locations of thefirst cooling chamber 3540 and the first buffer 3520 may be exchangedand the locations of the second cooling chamber 3550 and the secondbuffer 3530 may be exchanged.

Further, the edge exposure module 3500 may include an upper robot (notshown) for transferring the wafer W between the first edge exposurechamber 3570, first buffer 3520, and first cooling chamber 3540 and alower robot (not shown for transferring the wafer W between the secondedge exposure chamber 3580, second buffer 3530, and second coolingchamber 3550 instead of the edge exposure robot 3560.

In addition, the process module 3400 may other processes in addition tothe above-described processes.

(Pre/Post-Exposure Treatment Unit)

FIGS. 6 to 8 are schematic views of the pre/post-exposure treatment unit4000. That is, FIG. 6 is a view of the pre/post-exposure treatment unit4000 when viewed from above, FIG. 7 is a view of the pre/post-exposuretreatment unit 4000 of FIG. 6 when viewed in a direction “C,” and FIG. 8is a view of the pre/post-exposure treatment unit 4000 of FIG. 6 whenviewed in a direction “D,”

Referring to FIGS. 6 to 8, the pre/post-exposure treatment unit 4000includes a load port 4100, an index module 4200, a buffer module 4300, aprocess module 4400, and an interface module 4500. The pre/post-exposuretreatment unit 4000 is connected inline with the exposure unit 9000. Theexposure unit 9000 is coupled to the interface module 4500 along a lineextending in the first direction 12. For example, the exposure unit 9000performs a process using a liquid immersion lithography technology. Inaddition, the exposure unit 9000 performs the exposure process using afar-infrared radiation light source such as a KrF excimer laser or a ArFexcimer laser.

The load port 4100 includes a load table 4120 on which the container2000 receiving the wafers W is disposed. A plurality of the load tables4120 are provided and arranged in a line extending in the seconddirection 14. In FIG. 6, four load tables 41200 are provided.

The index module 420 transfers the wafers W between the load port 4100and the container 2000 on the load table 4120. The index module 4200includes a frame 4210, an index robot 4220, and a guide rail 4230. Theframe 4210 is generally formed in an empty rectangular parallelepipedshape. The frame 4210 is disposed between the load port 4100 and thebuffer module 4300. The frame 4210 of the index module 4200 may have thelower height than a frame 4310 of the buffer module 4300, which will bedescribed later. The index robot 4220 and the guide rail 4230 aredisposed in the frame 4210. The index robot 4220 has a 4-shaft drivingstructure such that a hand 4221 directly handling the wafer W can movein the first, second, and third directions 12, 14, and 16 and rotate ona horizontal plane. The index robot 4220 includes an arm 4222, a support4223, and a base 4224 in addition to the hand 4221. The hand 4221 isfixedly installed on the arm 4222. The arm 4222 is provided to beexpandable, contractible, and rotatable. The support 4223 is disposedsuch that a length direction thereof extends in the third direction 16.The arm 4222 is coupled to the support 4223 to be linearly movable alongthe support 4223 in the third direction 16. The guide rail 4230 isprovided such that a length direction thereof extends in the seconddirection 14. The support 4223 is fixedly coupled to the base 4224. Thebase 4224 is coupled to the guide rail 4230 to be linearly movable alongthe guide rail 4230. The frame 4210 is provided with a door opener (notshown) for opening and closing the door of the container 2000.

The buffer module 4300 includes a frame 4310, a first buffer 4320, asecond buffer 4330, a cooling chamber 4340, and a buffer robot 4350. Theframe 4310 is formed in an empty rectangular parallelepiped shape. Theframe 4310 is disposed between the index module 4200 and the processmodule 4400. The first buffer 4320, second buffer 4330, cooling chamber4340, and buffer robot 4350 are disposed in the frame 4310. The secondbuffer 4330, cooling chamber 4340, and first buffer 4320 aresequentially arranged upward in the third direction 16. The first buffer4320 is located at the same height as a first module 4401 of the processmodule 4400, which will be described later. The second buffer 4330 andthe cooling chamber 4340 are located at the same height as a secondmodule 4402 of the process module 4450, which will be described later.The buffer robot 4350 is located to be spaced apart from the secondbuffer 4330, cooling chamber 4340, and first buffer 4320 in the seconddirection 14 by a predetermined distance.

The first and second buffers 4320 and 4330 temporarily store a pluralityof the wafers W. The second buffer 4330 includes a housing 4331 and aplurality of supports 4332. The supports 4332 are disposed in thehousing 4331 and spaced apart from each other in the third direction 16.One wafer W is disposed on each of the supports 4332. The housing 4331is provided with openings (not shown) corresponding to the index robot4220 and buffer robot 4350 such that the index robot 4220 and bufferrobot 4360 can carry or take the wafer to or from the support 4332. Thefirst buffer 4320 has a similar structure to the second buffer 4330.However, the housing 4321 of the first buffer 4320 is provided withopenings corresponding to the buffer robot 4350 and a first robot 4432of the first module 4401, which will be described later. The number ofthe supports 4322 of the first buffer 4320 may be same as or differentfrom the number of the supports 4332 of the second buffer 4330.

The buffer robot 4350 transfers the wafer W between the first and secondbuffers 4320 and 4330. The buffer robot 4350 includes a hand 4361, anarm 4362, and a support 4363. The hand 4361 is fixedly installed on thearm 4362. The arm 4362 is configured to be capable of expanding andcontracting so that the hand 4361 can move in the horizontal direction.The arm 4362 is coupled to the support 4363 to be linearly movable alongthe support 4363 in the third direction 16. The support 4363 has alength extending from a location corresponding to the second buffer 4330to a location corresponding to the first buffer 4320. The support 4363may further extend over the location corresponding to the second buffer4330 or the location corresponding to the first buffer 4320. The bufferrobot 4350 may be configured to have a 2-shaft driving structure suchthat the hand 3361 moves only in the second and third directions 14 and16.

The cooling chamber 4340 cools the wafer W. The cooling chamber 4340includes a housing 4341 and a cooling plate 4342. The cooling plate 4342has a top surface on which the wafer W is disposed and a cooling element4343 for cooling the wafer W. A variety of elements such as coolingwater, a thermoelectric module, or the like may be used as the coolingelement 4343. In addition, the cooling chamber 4340 may be provided witha lift pin assembly (not shown) for locating the wafer W on the coolingplate 4342. The housing 4341 is provided with openings (not shown)corresponding to the index robot 4220 and the buffer robot 4350 so thatthe index robot 4220 and a second robot 4482 of the second module 4402,which will be described later, can carry or take the wafer W onto orfrom the cooling plate 4342. In addition, the cooling chamber 4340 maybe provided with doors (not shown) for opening and closing the openings.

The process module 4400 includes a first module 4401 and a second module4402. The first module 4401 performs a process for treating the wafer Wbefore the exposure process and the second module 4402 performs aprocess for treating the wafer W after the exposure process. The firstand second modules 4401 and 4402 are disposed at different layers. Forexample, the first module 4401 is located above the second module 4402.The first module 4401 includes a protective layer coating chamber 4410,a bake chamber 4420, and a return chamber 4430. The protective layercoating chamber 4410, bake chamber 4420, and return chamber 4430 aresequentially arranged in the second direction 14. Accordingly, theprotective layer coating chamber 4410 and the bake chamber 4420 arespaced apart from each other with the return chamber 4430 interposedtherebetween. A plurality of the protective layer coating chamber 4410are provided and arranged at different layers in the third direction 16.Alternatively, a plurality of the protective layer coating chambers 4410may be provided in the first and third directions 12 and 16. A pluralityof the bake chambers 4420 are provided at different layers in the thirddirection 16. Alternatively, the bake chambers 4420 may be arranged inthe first and third directions 12 and 16.

The return chamber 4430 is arranged side by side with the first buffer4320 of the buffer module 4300 in the first direction 12. The firstrobot 4432 is located within the return chamber 4430. The return chamber4430 is generally formed in a square shape or a rectangular shape. Thefirst robot 4432 transfers the wafers W between the bake chambers 4420,protective coating chambers 4410, first buffer 4320 of the buffer module4300, and a first buffer 4520 of the interface module 4500, which willbe described later. The first robot 4432 includes a hand 4433, an arm4434, and a support 4435. The hand 4433 is fixedly installed on the arm4434. The arm 4434 is structured to be capable of expanding,contracting, and rotating. The arm 4434 is coupled to the support 4435to be linearly movable along the support 4435 in the third direction 16.

The protective layer coating chamber 4410 coats a protective layer onthe wafer W to protect the resist layer during the liquid immersionlithography process. The protective layer coating chamber 4410 includesa housing 4411, a support plate 4412, and a nozzle 4413. The housing4411 is formed in a cup shape having an opened top. The support plate4412 is located within the housing 4411 and supports the wafer W. Thesupport plate 4412 is rotatably provided. The nozzle 4413 suppliesprotective liquid for forming the protective layer onto the wafer W onthe support plate 4412. The nozzle 4413 is formed in a circular tubeshape and supplies the protective liquid to the center of the wafer W.Alternatively, the nozzle 4413 may have a length equal to the diameterof the wafer W and may be provided at an outlet thereof with a slit. Inthis case, the support plate 4412 may be provided in a fixed state. Theprotective liquid includes a foaming material. The protective liquid maybe a material that has a low affinity with the photoresist and fire. Forexample, the protective liquid may include a fluorine-based solvent. Thecoating of the protective liquid by the protective layer coating chamber4410 starts from the central region of the wafer W while the wafer W onthe support plate 4412 rotates.

The bake chamber 4420 heat-treats the wafer W on which the protectivelayer is coated. The bake chamber 4420 has at least one of a coolingplate 4421 and a heating plate 4422. The cooling plate 4421 is providedwith a cooling element 4423 such as cooling water or a thermoelectricmodule. The heating plate 4422 is provided with a heating element 4424such as a heating wire or a thermoelectric module. Each of the heatingplate 4422 and the cooling plate 4421 may be provided in one bakechamber 4420. Alternatively, some of the bake chambers 4420 may haveonly the heating plate 4422 and the rest may have only the cooling plate4421. The second module 4402 includes a cleaning chamber 4460, apost-exposure bake chamber 4470, and a return chamber 4480. The cleaningchamber 4460, return chamber 4480, and post-exposure bake chamber 4470are sequentially arranged along a line extending in the second direction14. Therefore, the cleaning chamber 4460 and the post-exposure bakechamber 4470 are spaced apart from each other in the second direction 14with the return chamber 4480 interposed therebetween. A plurality of thecleaning chambers 4460 are provided and disposed at different layers inthe third direction 16. Alternatively, a plurality of the cleaningchambers 4460 may be arranged in each of the first and second directions12 and 16. A plurality of the post-exposure bake chambers 4470 areprovided and disposed at different layers along a line extending in thethird direction 16. Alternatively, a plurality of the post-exposure bakechambers 4470 may be arranged in each of the first and third directions12 and 13.

The return chamber 4480 is arranged side by side with the second buffer4330 of the buffer module 4300 in the first direction 12. The returnchamber 4480 is generally formed in a square shape or a rectangularshape. The second robot 4482 is located within the return chamber 4480.The second robot 4482 is configured to transfer the wafer W between thepost-exposure bake chambers 4470, cleaning chambers 4460, buffer module4300, cooling chamber 4340, and a second buffer 4530 of the interfacemodule 4500, which will be described later. The second robot 4482provided in the second module 4402 may have the same structure as thefirst robot 4432 of the first module 4401.

The cleaning chamber 4460 cleans the wafer W after the exposure process.The cleaning chamber 4460 includes a housing 4461, a support plate 4462,and a nozzle 4463. The housing 4461 is formed in a cup shape having anopened top. The support plate 4462 is located within the housing 4461and supports the wafer W. The support plate 4462 is rotatably provided.The nozzle 4463 supplies cleaning liquid to the wafer W on the supportplate 4462. The cleaning liquid may be water such as deionized water.The cleaning chamber 4460 supplies the cleaning liquid to the centralregion of the wafer W while rotating the wafer W on the support plate4462. As the wafer W rotates, the nozzle 4463 may linearly move orrotate from the central region to the peripheral region of the wafer W.

The post-exposure bake chamber 4470 heats the wafer W that is treated inthe exposure process using deep ultraviolet. The post-exposure bakeprocess completes a property variation by amplifying acid, which isgenerated by exposing the photoresist, by heating the wafer W. Thepost-exposure bake chamber 4470 has a heating plate 4472. The heatingplate 4472 is provided with a heating element 4472 such as a heatingwire or a thermoelectric module. The post-exposure chamber 4470 mayfurther include a cooling plate 4471. The cooling plate 4471 is providedwith a cooling element 4473 such as cooling water and a thermoelectricmodule. Alternatively, a bake chamber having only the cooling plate 4471may be further provided.

As described above, the first and second modules 4401 and 4402 arecompletely separated from each other in the process module 4400. Inaddition, the return chamber 4430 of the first module 4401 has the samesize as the return chamber 4480 of the second module 4402 so that theycan completely overlap with each other when viewed from above. Inaddition, the protective layer coating chamber 4410 has the same size asthe cleaning chamber 4460 so that the protective layer coating chamber4410 and the cleaning chamber 4460 completely overlap with each otherwhen viewed from above. Further, the bake chamber 4420 has the same sizeas the post-exposure bake chamber 4470 so that they completely overlapwith each other when viewed from above.

The interface module 4500 transfers the wafer W between the processmodule 4400 and the exposure unit 9000. The interface module 4500includes a frame 4510, a first buffer 4520, a second buffer 4530, and aninterface robot 4540. The interface robot 4540, first buffer 4520, andsecond buffer 4530 are located within the frame 4510. The first andsecond buffers 4520 and 4530 are spaced apart from each other andstacked one another. The first buffer 4520 is disposed above the secondbuffer 4530. The first buffer 4520 is disposed at a height correspondingto the first module 4401. The second buffer 4530 is disposed at a heightcorresponding to the second module 4402. When viewed from above, thefirst buffer 4520 is arranged inline with the return chamber 4430 of thefirst module 4401 in the first direction 12. The second buffer 4530 isarranged inline with the return chamber 4430 of the second module 4402in the first direction 12. The interface robot 4540 is spaced apart fromthe first and second buffers 4520 and 4530 in the second direction 14.The interface robot 4540 transfers the wafer W between the first buffer4520, second buffer 4530, and exposure unit 9000. The interface robot4540 has a similar structure to the buffer robot 4530.

The first buffer 4520 temporarily stores the wafers W that are processedin the first module 4401 before the wafers W are transferred to theexposure unit 9000. The second buffer 4530 temporarily stores the wafersW that are processed in the exposure unit 9000 before the wafers W aretransferred to the second module 4402. The first buffer 4520 has ahousing 4521 and a plurality of supports 4522. The supports 4522 aredisposed within the housing 4521 and spaced apart from each other in thethird direction 16. One wafer W is disposed on each of the supports4522. The housing 4521 is provided with openings respectivelycorresponding to the interface robot 4540 and the first robot 4432 sothat the interface robot 4540 and the first robot 4432 can carry andtake out the wafer W to and from the supports 4522 in the housing 4521.The second buffer 4530 has a similar structure to the first buffer 4520.However, the housing 4531 of the second buffer 4530 is provided withopenings (not shown) respectively corresponding to the interface robot4540 and the second robot 4482. The number of the supports 4522 of thefirst buffer 4520 may be same as or different from that of the supports4532 of the second buffer 4530.

The following will describe a process performed by the pre/post-exposuretreatment unit 4000 according to one embodiment with reference to FIG.9. FIG. 9 is a flowchart illustrating a process for the wafer W by thepre/post-exposure treatment unit 4000 according to one embodiment. InFIG. 5, a case where the chemically amplified resist is coated on thewafer W and the exposure unit 9000 performs the exposure process andliquid immersion lithography using deep ultraviolet light source will beexemplarily described.

The wafers W that are processed in the coating unit 3000 are loaded inthe container 2000. The container 2000 is disposed on the load table4120 of the pre/post-exposure treatment unit 400 (S212). The door isopened by the door opener (not shown). The index robot 4220 takes outthe wafer W from the container 2000 and carries the same to the secondbuffer 4330 of the buffer module 4300 (S214). The buffer robot 4350carries the wafer W stored in the second buffer 4330 to the first buffer4320 (S216). The first robot 4432 takes out the wafer from the firstbuffer 4320 and carries the same to the protective layer coating chamber4410 of the process module 4400 (S218). The protective layer coatingchamber 4410 coats the protective layer on the wafer W (S220). Next, thefirst robot 4432 transfers the wafer W from the protective layer coatingchamber 4410 to the bake chamber 4420 (S222). The bake chamber 4420performs a heat treatment such as heating and cooling for the wafer W(S224).

The first robot 4432 takes out the wafer W from the bake chamber 4420and carries the same to the first buffer 4520 (S226). The interfacerobot 4540 carries the wafer W from the first buffer 4520 to theexposure unit 9000 (S228). The exposure process for the wafer W isperformed in the exposure unit 9000 (S230). Next, the interface robot4540 carries the wafer W from the exposure unit 9000 to the secondbuffer 4530 (S232).

The second robot 4482 takes out the wafer W from the support of thesecond buffer 4530 and carries the same to the cleaning chamber 4460 ofthe process module 4400 (S234). The cleaning chamber 4460 suppliescleaning liquid to a surface of the wafer W to perform the cleaningprocess (S236). When the cleaning of the wafer W by the cleaning liquidis completed, the second robot 4482 immediately takes out the wafer Wfrom the cleaning chamber 4460 and carries the same to the post-exposurebake chamber 4470 (S238). The cleaning liquid adhered to the wafer W isremoved by heating the wafer W on the heat plate of the post-exposurebake chamber 4470 and, at the same time, the acid generated in thephotoresist is amplified to complete the property variation of thephotoresist (S240).

The second robot 4482 carries the wafer W from the post-exposure bakechamber 4470 to the cooling chamber 4340 of the buffer module 4300(S242). The cooling of the wafer W is performed in the cooling chamber4340 (S244). The index robot 4220 takes out the wafer W from the coolingchamber 4340 and carries the same to the container 2000 (S246).

The container 2000 is carried to the developing unit 5000 and thedeveloping process is performed in the developing unit 5000.

Some of the protective layer remaining on the wafer W is removed by adeveloping solution and the rest is removed together with thephotoresist during an ashing process.

According to an embodiment of FIG. 6, no protective layer removalchamber is provided in the pre/post-exposure treatment unit 4000.Therefore, the structure of the pre/post-exposure treatment unit 4000 isrelatively simple and the time for performing the process can bereduced.

In addition, when the chemically amplified resist is used, the timingfor performing the post-exposure baking process after the exposureprocess is performed is important. According to the embodiment of FIG.6, the post-exposure bake chamber 4470 is provided to thepre/post-exposure treatment unit 4000. Accordingly, the amplifying ofthe acid in the pre/post-exposure treatment unit 4000 can be quicklyrealized before the wafer W is transferred to the developing unit 5000.

Further, according to the embodiment of FIG. 6, the cleaning chamber4460 performs only the cleaning process for the wafer W using thecleaning liquid. That is, the cleaning chamber 4460 does not perform thedrying process for the wafer W using drying gas. The drying of the waferW is performed by heating the wafer W. For example, the drying of thewafer W is performed simultaneously with the acid amplification in thepost-exposure bake chamber 4470. Accordingly, the process time can bereduced as compared with a case where the cleaning and drying of thewafer are preformed in the cleaning chamber 4460.

The following will describe a variety of modified examples of thepre/post-exposure treatment unit 4000.

In the above-described embodiment, it is described that the first module4401 is disposed above the second module 4402. However, the secondmodule 4402 may be disposed above the first module 4401.

In addition, the process module 4400 may include only one module insteadof the first and second modules 4401 and 4402 that are disposed atdifferent layers. In this case, all of the protective layer coatingchamber 4410, bake chamber 4420, cleaning chamber 4460, andpost-exposure bake chamber 4470 may be provided in the module.

In addition, the cleaning chamber 4460 may further includes a nozzle forsupplying drying gas in addition to the nozzle for supplying thecleaning liquid. In this case, the cleaning liquid adhered to the waferW can be removed before the wafer W is heated in the post-exposure bakechamber 4470.

Further, no cooling plate may be provided in the second module 4402. Thecooling of the wafer W may be realized only in the cooling chamber 4340of the buffer module 4300. In this case, a plurality of the coolingchambers 4340 may be disposed in the buffer module 4300 and stacked oneanother.

In addition, no cooling chamber 4340 may be provided in the buffermodule 4300. In this case, the wafer W that is cooled in the secondmodule 4402 is directly transferred to the second buffer 4330 by thesecond robot 4482 and the index robot 4220 transfers the wafer W storedin the second buffer 4330 to the container 2000.

Further, the locations of the cooling chamber 4340 and the second buffer4330 in the buffer module 4300 may be exchanged.

In addition, the locations of the first and second modules 4401 and 4402may be exchanged. In this case, the cooling unit in the buffer module4300 may be selectively provided at a height corresponding to the secondmodule 4402.

Further, the buffer module 4300 may have the same height as the processmodule 4400. In this case, the index robot 4220 may directly transferthe wafer to the first buffer 4320.

In addition, a protective layer removal chamber for removing theprotective layer after the exposure process may be provided in thesecond module 4402. In this case, the protective layer on the wafer Wcan be removed before the etching process.

Further, when the exposure unit 9000 performs a process using a methodother than the liquid immersion lithography method, no protective layercoating unit 3000 may provided in the first module 4401. In this case,no bake chamber 4420 may be also provided. In this case, the processmodule 4400 may include only the second module 4402 without the firstmodule 4401.

In addition, when the exposure unit 9000 uses a light source other thanthe deep ultraviolet light source, no post-exposure bake chamber 4470may be provided in the second module 4402.

(Developing Unit)

FIGS. 10 to 12 are schematic views of the developing unit 5000. That is,FIG. 10 is a view of the developing unit 5000 when viewed from above,FIG. 11 is a view of the developing unit 5000 when viewed in a direction“E,” and FIG. 12 is a view of the developing unit 5000 when viewed in adirection F.”

Referring to FIGS. 10 to 12, the developing unit 5000 includes a loadport 5100, an index module 5200, a buffer module 5300, and a processmodule 5400. The load port 5100, index module 5200, buffer module 5300,and process module 5400 are sequentially arranged in the first direction12. The load port 5100 has a load table 5120 on which the container 2000receiving the wafers W is disposed. A plurality of the load tables 5120are provided and arranged in a line extending in the second direction14. In FIG. 10, four load tables 5120 are provided.

The index module 5200 transfers the wafer W between the container 2000on the load table and the buffer module 5300. The index module 5200includes a frame 5210, an index robot 5220, and a guide rail 5230. Theframe 5210 is formed in an empty rectangular parallelepiped shape anddisposed between the load port 5100 and the buffer module 5300. Theframe 5210 may be provided to be lower than a frame 5310 of the buffermodule 5300, which will be described later. The index robot 5220 and theguide rail 5230 are disposed within the frame 5210. The index robot 5220has a 4-shaft driving structure such that a hand 5221 directly handlingthe wafer W can rotate and move in the first, second, and thirddirections 12, 14, and 16. The index robot 5220 includes an arm 5222, asupport 5223, and a base 5224 in addition to the hand 5221. The arm 5222is provided to be expandable and contractible so that the hand 5222 canbe movable in the horizontal direction. The support 5223 is disposedsuch that a length direction thereof extends in the third direction 16.The arm 5222 is coupled to the support 5223 to be movable along thesupport 5223. The guide rail 5230 is provided such that a lengthdirection thereof extends in the second direction 14. The support 5223is fixedly coupled to the base 5224. The base 5224 is coupled to theguide rail 5230 to be linearly movable along the guide rail 5230.Although not shown in the drawings, the frame 5210 is provided with adoor opener for opening and closing the door of the container 2000.

Referring to FIG. 11, the buffer module 5300 includes a frame 5310, afirst buffer 5320, a second buffer 5330, a first cooling chamber 5340, asecond cooling chamber 5350, and a buffer robot 5360. The frame 5310 isformed in an empty rectangular parallelepiped shape. The frame 5310 isdisposed between the index module 5200 and the process module 5400. Thefirst buffer 5320, second buffer 5330, first cooling chamber 5340,second cooling chamber 5350, and buffer robot 5360 are disposed in theframe 5310. The second cooling chamber 5350, second buffer 5330, firstcooling chamber 5340, and first buffer 5320 are sequentially arrangedupward in the third direction 16. The first cooling chamber 5340 and thefirst buffer 5320 are located at the same height as a first module 5401of the process module 5400, which will be described later. The secondcooling chamber 5350 and the second buffer 5330 are located at the sameheight as a second module 5402 of the process module 5400, which will bedescribed later. The buffer robot 5360 is located to be spaced apartfrom the second buffer 5330, second cooling chamber 5350, first buffer5320, and first cooling chamber 5340 in the second direction 14 by apredetermined distance.

Each of the first and second buffers 5320 and 5330 temporarily stores aplurality of the wafers W. The second buffer 5330 includes a housing5331 and a plurality of supports 5332. The supports 5332 are disposed inthe housing 5331 and spaced apart from each other in the third direction16. One wafer W is disposed on each of the supports 5332. The housing5331 is provided with openings (not shown) corresponding to the indexrobot 5220, buffer robot 5360, and second robot 5482 such that the indexrobot 5220, buffer robot 5360, and a second robot 5482 of the secondmodule 5402, which will be described later, can carry or take the waferto or from the support 5332. The first buffer 5320 has a similarstructure to the second buffer 5330. However, the housing 5321 of thefirst buffer 5320 is provided with openings corresponding to the bufferrobot 5360 and a first robot 5432 on the first module 5401, which willbe described later. The number of the supports 5322 of the first buffer5320 may be same as or different from the number of the supports 5332 ofthe second buffer 5330. For instant, the number of the supports 5332 ofthe second buffer 5330 may be greater than the number of the supports5322 of the first buffer 5320.

The buffer robot 5360 transfers the wafer W between the first and secondbuffers 5320 and 5330. The buffer robot 5360 includes a hand 5361, anarm 5362, and a support 5363. The hand 5361 is fixedly installed on thearm 5362. The arm 5362 is configured to be capable of expanding andcontracting so that the hand 5361 can move in the second direction 14.The arm 5362 is coupled to the support 5363 to be linearly movable alongthe support 5363 in the third direction 16. The support 5363 has alength extending from a location corresponding to the second buffer 5330to a location corresponding to the first buffer 5320. The support 5363may further extend over the location corresponding to the second buffer5330 or the location corresponding to the first buffer 5320. The bufferrobot 5360 may be configured to have a 2-shaft driving structure suchthat the hand 5361 moves only in the second and third directions 14 and16.

The first and second cooling chambers 5340 and 5350 cool the wafer W.The first cooling chamber 5340 has the same structure as the secondcooling chamber 5350. The second cooling chamber 5350 has a housing 5351and a cooling plate 5352. The cooling plate 5352 has a top surface onwhich the wafer W is disposed and a cooling unit 5353 cooling the waferW. The cooling element 5353 may be formed of a variety of elements suchas cooling water, a thermoelectric module, and the like. In addition,the second cooling chamber 5350 may be provided with a lift pin assembly(not shown) locating the wafer W on the cooling plate 5352. The housing5351 is provided with openings (not shown) corresponding to the indexrobot 5220 and the second robot 5482 so that the index robot 5220 and asecond robot 5482 of the second module 5402, which will be describedlater, can carry or take the wafer W onto or from the cooling plate5352. In addition, the second cooling chamber 5350 may be provided withdoors (not shown) for opening and closing the openings.

The process module 5400 performs a process required before the wafer Wis transferred to the pre/post-exposure treatment unit 4000. The processmodule is generally formed in a rectangular parallelepiped shape. Theprocess module 5400 includes a first module 5401 and a second module5402. The first and second modules 5401 and 5402 are arranged atdifferent layers. The first and second modules 5401 and 5402 may beprovided to perform a same process. For example, the first module 5401is located above the second module 5402.

The first module 3401 includes a developing chamber 5410, a bake chamber5420, and a return chamber 5430. The developing chamber 5410, bakechamber 5420, and return chamber 5430 are sequentially arranged in thesecond direction 14. Therefore, the developing chamber 5410 and the bakechamber 5420 are spaced apart from each other in the second direction 14with the return chamber 5430 interposed therebetween. A plurality of thedeveloping chambers 5410 are arranged in each of the first and thirddirections 12 and 16. In the drawings, six developing chambers 5410 areexemplarily provided. A plurality of the bake chambers 5420 are arrangedin each of the first and third directions 12 and 16. In the drawings,six bake chambers 5420 are exemplarily provided. However, six or morebake chambers 5420 may be provided.

The return chambers 5430 are located side by side with the first buffer5320 of the buffer module 5300 in the first direction 12. The firstrobot 5432 and the guide rail 5433 are disposed in the return chamber5430. The return chamber 5430 is generally formed in a rectangularshape. The first robot 5432 transfers the wafer W between the bakechambers 5320, developing chambers 5400, first buffer 5320, and firstcooling chamber 5340. The guide rail 5433 has a length directionextending in the first direction 12. The guide rail 5433 guides thelinear movement of the first robot 5432 in the first direction 12. Therobot 5432 has a hand 5434, an arm 5453, a support 5436, and a base5437. The hand 5434 is fixedly installed on the arm 5435. The arm 5435is configured to be capable of expanding and contracting so that thehand 5434 can move in the horizontal direction. The support 5436 isdisposed such that a length direction thereof extends in the thirddirection 16. The arm 5435 is coupled to the support 5436 to be capableof linearly moving along the support 5436 in the third direction 16. Thesupport 5436 is fixedly coupled to the base 5437 and the base 5437 iscoupled to the guide rail 5433 to be capable of moving along the guiderail 5433.

All of the developing chambers 5410 have the same structure. However,types of the developing solution used in the developing chamber 5410 maybe different from each other. The developing chamber 5410 removes aportion of the photoresist, which is exposed to the light. At thispoint, a portion of the protective layer, which is exposed to the light,is also removed together. Selectively, portions of the photoresist andprotective layer, which are not exposed to the light, may be removeddepending on the type of the developing solutions used.

The developing chamber 5410 includes a housing 5411, a support plate5412, and a nozzle 5413. The housing 5411 is formed in a cup shapehaving an opened top. The supporting plate 5412 is located in thehousing 3411 to support the wafer W. The supporting plate 3412 isconfigured to be capable of rotating. The nozzle 5413 supplies thedeveloping solution onto the wafer W on the supporting plate 5412. Thenozzle 5412 is formed in a circular tube shape to supply the developingsolution to a center of the wafer W. Alternatively, the nozzle 5412 mayhave a length corresponding to a diameter of the wafer W and have aslit-type outlet. In addition, the developing chamber 5410 may furtherinclude a nozzle 5414 for supplying cleaning liquid such as deionizedwater for cleaning a surface of the wafer W on which the photoresist iscoated.

The bake chambers 5420 heat-treat the wafer W. For example, the bakechambers 3420 perform a post-bake process for heating the wafer W beforethe developing process, a hard bake process for heating the wafer Wafter the developing process, and cooling processes performed after therespective bake processes. The bake chamber 5420 includes a coolingplate 5421 or a heating plate 5422. The cooling plate 5421 is providedwith a cooling element 5423 such as cooling water or thermoelectricmodule. The heating plate 5422 is provided with a heating element 5424such as a heating wire or a thermoelectric module. The heating plate5422 and the cooling plate 5421 may be provided in the respective bakechambers 5420. Alternatively, some of the bake chambers 5420 may beprovided with only the heating plate 5422 and the rest may be providedwith only the cooling plate 5421.

The second module 5402 includes a developing chamber 5460, a bakechamber 5470, and a return chamber 5480. The developing chamber 5460,bake chamber 5470, and return chamber 5480 have same structures andarrangements as the developing chamber 5410, bake chamber 5420, andreturn chamber 5430 of the first module 5401. In addition, the returnchamber 5480 has a second robot 5482 having the same structure as thefirst robot 3432 of the first module 3401. The second robot 5482 isconfigured to transfer the wafer W between the developing chamber 5460,bake chamber 5470, second buffer 5330, and second cooling chamber 5350.

In the above-described process module 3400, the first and second modules3401 and 3402 are separated from each other. In addition, when viewedfrom above, the first module 3401 has the same structure and arrangementas the second module.

The following will describe a process by the developing unit 5000 ofFIG. 10 with reference to FIGS. 13 a and 13 b. FIGS. 13 a and 13 b areflowcharts illustrating a process for the wafer W by the developing unit5000 according to one embodiment.

The container 2000 receiving the wafers W is disposed on the load table5120 of the load port 5100 (S312). The door of the container 2000 isopened by the door opener. The index robot 5220 takes out the wafer Wfrom the container 2000 and carries the same to the second buffer 5330(S314). The wafer W is transferred to one of the first and secondmodules 5401 and 5402.

When it is selected that the wafer W is processed in the first module5401, the buffer robot 5360 carries the wafer W stored in the secondbuffer 5330 to the first buffer 5320 (S320). The first robot 5432 takesout the wafer W from the first buffer 5320 and carries the same to thebake chamber 5420 (S322). The bake chamber 5420 performs sequentiallythe post-bake process and the cooling process (S324). The first robot5432 takes out the wafer W from the bake chamber 5420 and carries thesame to the developing chamber 3410 (S326). The developing chamber 5410coats the developing solution onto the wafer W (S328). Next, the firstrobot 5423 carries the wafer W from the developing chamber 5410 to thebake chamber 5420 (S330). The bake chamber 5420 performs the hard bakeprocess for the wafer W (S332).

The first robot 5432 takes out the wafer from the bake chamber 5420 andcarries the same to the first cooling chamber 5430 (S334). The firstcooling chamber 5430 performs a process for cooling the wafer W (S336).The index robot 5220 takes out the wafer from the first cooling chamber5340 and carries the same to the container 2000 (S338).

When it is selected that the wafer W is processed in the second module5402, the second robot 5482 takes out the wafer W from the second buffer5330 and carries the same to the bake chamber 5470 of the second module5402 (S360). The bake chamber 5470 sequentially performs the post-bakeprocess and the cooling process (S362). The second robot 5482 takes outthe wafer W from the bake chamber 5470 and carries the same to thedeveloping chamber 5460 (S364). The developing solution is coated ontothe wafer W in the developing chamber 5460 (S366). Next, the secondrobot 5482 carries the wafer W from the developing chamber 5460 to thebake chamber 5470 (S368). The bake chamber 5470 performs the hard bakeprocess for the wafer W (S370).

The second robot 5482 takes out the wafer W from the bake chamber 5470and carries the same to the second cooling chamber 5350 (S372). Thesecond cooling chamber 5350 performs the cooling process for the wafer W(S374). The index robot 5220 carries the wafer W from the second coolingchamber 5350 to the container 2000 (S376).

The following will describe a variety of modified examples of thedeveloping unit 5000.

The process module 5400 may include only one module instead of the firstand second modules 5401 and 5402 that are disposed at different layers.

In addition, a plurality of first cooling chambers 5340 and a pluralityof second cooling chambers 5350 are stacked one another in the indexmodule 5200.

In addition, the first and second cooling chambers 5340 and 5350 may notbe provided in the buffer module 5300. In this case, the wafer W may bedirectly transferred from the first module 5401 to the first buffer 5320by the first robot 5432 and the index robot 5220 may carry the wafers Wstored in the first buffer 5320 to the container 2000. In addition, thewafer W may be directly transferred from the second module 5402 to thesecond buffer 5330 by the second robot 5482 and the index robot 5220 maycarry the wafers W stored in the second buffer 5330 to the container2000.

Further, the locations of the first buffer 5320 and the first coolingchamber 5340 may be exchanged in the buffer module 5300. The locationsof the second buffer 5330 and the second cooling chamber 5350 may bealso exchanged in the buffer module 5300.

In addition, the buffer module 5300 may have the same height as theprocess module 5400. In this case, the index robot 5220 may directlycarry the wafers W to the first buffer 5320.

Further, additional processes other than the above-described processesmay be further performed in the process module 5400.

According to the embodiment of FIG. 1, the substrate treatment apparatusis designed such that the process for performing the coating process,the unit for performing the developing process, and the unit that isconnected inline with the exposure unit 9000 to perform thepre/post-exposure treatment process are independently provided.Accordingly, unlike the apparatus in which a module for simultaneouslyperforming the coating and developing processes are provided inline withthe exposure unit 9000, the coating and developing units 3000 and 5000of the substrate treatment system of the embodiment of FIG. 1 cancontinuously perform their processes even when it takes a long time toperform the process in the exposure unit 900 and thus the wafers W arecongested.

FIGS. 14 a and 14 g are views illustrating sequential processes forforming a pattern on a thin film formed on the wafer W.

First, a thin film 102 is deposited on the wafer W in a deposition unit(not shown) (see FIG. 14 a). The wafer W is transferred to the coatingunit 3000. In the coating unit 3000, a photoresist 104 is coated on thewafer W (see FIG. 14 b). In the coating unit 3000, other processes suchas the bake process, the edge exposure process, and the like are furtherprocessed. Next, the wafer W is transferred to the pre/post-exposuretreatment unit 4000. The protective layer 106 is coated on the wafer Win the first module 4401 of the pre/post-exposure treatment unit 4000(see FIG. 14 c). As previously described, other processes such as thebake process and the like are further performed in the first module4401. The wafer W is carried to the exposure unit 9000. The exposureunit 9000 irradiates light to a selected region 108 on the protectivelayer 106 and the photoresist 104 to change the property of the selectedregion 108 (see FIG. 14 d). The second module 4402 of thepre/post-exposure treatment unit 4000 performs the cleaning process, thepost-exposure bake process, and the like. The cleaning liquid remainingon the wafer W is removed during the post-exposure bake process. Next,the wafer W is transferred to the developing unit 5000. The selectedregion 108 of the protective layer 106 and the photoresist 104, which ischanged in its property, is removed in the developing unit 5000 (seeFIG. 14 e). As previously described, the developing unit 5000 furtherperforms other processes such as the bake process and the like inaddition to the developing process. Next, the wafer W is transferred tothe etching unit (not shown). The exposed region 103 of the thin film isremoved in the etching unit (see FIG. 14 f). Next, the wafer W istransferred to the ashing unit (not shown). The photoresist 104 and theprotective layer 106 that remains on the thin film are removed in theashing unit (see FIG. 14 g). While the wafer is transferred between thedeposition unit, coating unit 3000, pre/post-exposure treatment unit4000, developing unit 5000, etching unit, and ashing unit, otherprocesses such as the process for cleaning the wafer W and the like maybe further performed.

According to the embodiments, the photolithography process can beefficiently performed.

In addition, the production yield in the coating unit and the developingunit can be increased.

Further, when the chemically amplified photoresist is used, thepost-exposure bake process can be quickly performed.

In addition, since the cleaning liquid remaining on the substrate can beremoved by amplifying acid in the post-exposure bake unit without usinga separate drying nozzle in the cleaning chamber, the process time canbe reduced.

Furthermore, since the protective layer is removed in the developingprocess and the ashing process without using a separate protectiveremovable chamber in the pre/post-exposure treatment unit, the processtime can be reduced.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe true spirit and scope of the present invention. Thus, to the maximumextent allowed by law, the scope of the present invention is to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing detailed description.

1. A pre/post-exposure treatment unit for performing processes requiredbefore and after an exposure process for a substrate on whichphotoresist is coated, the pre/post-exposure treatment unit comprising:a load port on which a container configured to receive the substrate; anindex module configured to take out the substrate from the container orcarry the substrate to the container; a process module configured toperform a process for the substrate; and an interface module connectedto an exposure unit, wherein the load port, index module, processmodule, and interface module are sequentially arranged in a firstdirection; and the process module includes a protective layer coatingchamber configured to coat a protective layer on the substrate.
 2. Thepre/post-exposure treatment unit of claim 1, wherein the process modulefurther comprises a cleaning chamber configured to clean the substrate.3. The pre/post-exposure treatment unit of claim 1, wherein the processmodule further comprises a bake chamber configured to heat-treat thesubstrate.
 4. The pre/post-exposure treatment unit of claim 1, whereinthe process module further comprises a post-exposure bake chamberconfigured to perform a post-exposure bake process for the substratethat is exposed.
 5. The pre/post-exposure treatment unit of claim 2,wherein the process module comprises first and second modules being atdifferent layers, wherein the protective layer coating chamber is in thefirst module and the cleaning chamber is in the second module.
 6. Thepre/post-exposure treatment unit of claim 5, wherein the process modulecomprises: a bake chamber in the first module and configured toheat-treat the substrate; a first robot in the first module andconfigured to transfer the substrate between the protective layercoating chamber and the bake chamber; a post-exposure bake chamber inthe second module and configured to perform a post-exposure bake processfor the substrate that is exposed; and a second robot in the secondmodule and configured to transfer the substrate between the cleaningchamber and the post-exposure bake chamber.
 7. The pre/post-exposuretreatment unit of claim 5, further comprising a buffer module betweenthe index module and the process module, wherein the buffer modulecomprises: a first buffer at a height corresponding to the first moduleand temporarily storing the substrate; and a second buffer at a heightcorresponding to the second module and temporarily storing thesubstrate.
 8. The pre/post-exposure treatment unit of claim 7, whereinthe first and second buffers are arranged in a stack, each of the firstand second buffers comprises a plurality of supports, and each of theplurality of supports is configured to support the substrate.
 9. Thepre/post-exposure treatment unit of claim 8, wherein the buffer modulefurther comprises a buffer robot configured to transfer the substratebetween the first and second buffers.
 10. The pre/post-exposuretreatment unit of claim 9, wherein the first and second buffers arearranged side by side in a vertical direction.
 11. The pre/post-exposuretreatment unit of claim 7, wherein the buffer module is disposed at aheight corresponding to the first module, and the buffer module furthercomprises a cooling chamber configured to cool the substrate.
 12. Thepre/post-exposure treatment unit of claim 5, wherein the interfacemodule comprises: a first buffer disposed at a height corresponding tothe first module and temporarily storing the substrate; a second bufferdisposed at a height corresponding to the second module and temporarilystoring the substrate; and an interface robot transferring the substratebetween the first buffer and the exposure unit and between the secondbuffer and the exposure unit.
 13. The pre/post-exposure treatment unitof claim 12, wherein the first and second buffers are arranged in astack, each of the first and second buffers comprises a plurality ofsupports, and each of the plurality of supports is configured to supportthe substrate.